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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > IRF3205LPBF
Infineon Technologies

IRF3205LPBF

Manufacturer Part Number IRF3205LPBF
Manufacturer Infineon Technologies
Detailed Description MOSFET N-CH 55V 110A TO262
Package TO-262
In Stock 4042 pcs
Data sheet Mult Dev Label Chgs 18/Feb/2020Mult Dev Label Chgs Aug/2020Mult Device Standard Label Chg 29/Sep/2017Mult Dev Label Chgs 8/Sep/2021IR Part Numbering SystemMult Dev A/T Site 26/Feb/2021
Reference Price (In US Dollars)
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Specifications

Product Attribute Attribute Value
Vgs(th) (Max) @ Id 4V @ 250µA
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
Supplier Device Package TO-262
Series HEXFET®
Rds On (Max) @ Id, Vgs 8mOhm @ 62A, 10V
Power Dissipation (Max) 200W (Tc)
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA
Package Tube
Operating Temperature -55°C ~ 175°C (TJ)
Product Attribute Attribute Value
Mounting Type Through Hole
Input Capacitance (Ciss) (Max) @ Vds 3247 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs 146 nC @ 10 V
FET Type N-Channel
FET Feature -
Drive Voltage (Max Rds On, Min Rds On) 10V
Drain to Source Voltage (Vdss) 55 V
Current - Continuous Drain (Id) @ 25°C 110A (Tc)
Base Product Number IRF3205

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IRF3205LPBF Datasheet PDF

Data sheet

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