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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > IRF2807ZPBF
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IRF2807ZPBF

Reference Price (In US Dollars)
1 10 100 500 1000 2000 5000 10000
$0.782 $0.702 $0.564 $0.463 $0.384 $0.357 $0.344 $0.335
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Specifications

Product Attribute Attribute Value
Vgs(th) (Max) @ Id 4V @ 250µA
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
Supplier Device Package TO-220AB
Series HEXFET®
Rds On (Max) @ Id, Vgs 9.4mOhm @ 53A, 10V
Power Dissipation (Max) 170W (Tc)
Package / Case TO-220-3
Package Tube
Operating Temperature -55°C ~ 175°C (TJ)
Product Attribute Attribute Value
Mounting Type Through Hole
Input Capacitance (Ciss) (Max) @ Vds 3270 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs 110 nC @ 10 V
FET Type N-Channel
FET Feature -
Drive Voltage (Max Rds On, Min Rds On) 10V
Drain to Source Voltage (Vdss) 75 V
Current - Continuous Drain (Id) @ 25°C 75A (Tc)
Base Product Number IRF2807

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IRF2807ZPBF Datasheet PDF

Data sheet