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Specifications
Product Attribute
Attribute Value
Vgs(th) (Max) @ Id
4V @ 250µA
Vgs (Max)
±20V
Technology
MOSFET (Metal Oxide)
Supplier Device Package
D²PAK (TO-263)
Series
-
Rds On (Max) @ Id, Vgs
6.5mOhm @ 66A, 10V
Power Dissipation (Max)
170W (Tc)
Package / Case
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Package
Tape & Reel (TR)
Operating Temperature
-55°C ~ 175°C (TJ)
Product Attribute
Attribute Value
Mounting Type
Surface Mount
Input Capacitance (Ciss) (Max) @ Vds
3450 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs
110 nC @ 10 V
FET Type
N-Channel
FET Feature
-
Drive Voltage (Max Rds On, Min Rds On)
10V
Drain to Source Voltage (Vdss)
55 V
Current - Continuous Drain (Id) @ 25°C
75A (Tc)
Base Product Number
IRF3205
Recommended Products
IRF322N-CHANNEL HERMETIC MOS HEXFETInternational Rectifier
