IPD65R950CFDBTMA1
| Manufacturer Part Number | IPD65R950CFDBTMA1 |
|---|---|
| Manufacturer | Infineon Technologies |
| Detailed Description | MOSFET N-CH 650V 3.9A TO252-3 |
| Package | PG-TO252-3 |
| In Stock | 5184 pcs |
| Data sheet | Part Number GuideCover Tape Width Cancellation 14/Jul/2015Cover Tape Width Update 17/Jun/2015Mult Devices EOL 31/Aug/2017Halogen Free Upgrade 22/Aug/2013Mult Devices Retraction 31/Aug/2017Mult Dev EOL 4/Mar/2020Mult Dev Assembly Chgs 8/Oct/2018 |
Reference Price (In US Dollars)
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Specifications
| Product Attribute | Attribute Value |
|---|---|
| Vgs(th) (Max) @ Id | 4.5V @ 200µA |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Supplier Device Package | PG-TO252-3 |
| Series | CoolMOS™ |
| Rds On (Max) @ Id, Vgs | 950mOhm @ 1.5A, 10V |
| Power Dissipation (Max) | 36.7W (Tc) |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Package | Tape & Reel (TR) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Product Attribute | Attribute Value |
|---|---|
| Mounting Type | Surface Mount |
| Input Capacitance (Ciss) (Max) @ Vds | 380 pF @ 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 14.1 nC @ 10 V |
| FET Type | N-Channel |
| FET Feature | - |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Drain to Source Voltage (Vdss) | 650 V |
| Current - Continuous Drain (Id) @ 25°C | 3.9A (Tc) |
| Base Product Number | IPD65R |
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