IPD65R380E6ATMA1
Manufacturer Part Number | IPD65R380E6ATMA1 |
---|---|
Manufacturer | Infineon Technologies |
Detailed Description | MOSFET N-CH 650V 10.6A TO252-3 |
Package | PG-TO252-3 |
In Stock | 97836 pcs |
Data sheet | Part Number GuideCover Tape Width Cancellation 14/Jul/2015Cover Tape Width Update 17/Jun/2015Mult Dev Leadframe Chgs 9/Jun/2020Mult Dev Leadframe Rev 30/Jun/2020CoolMOS A/T Chgs 4/Mar/2022 |
Reference Price (In US Dollars)
1 | 10 | 100 | 500 | 1000 |
---|---|---|---|---|
$0.957 | $0.86 | $0.691 | $0.568 | $0.47 |
Delivery Time
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Specifications
Product Attribute | Attribute Value |
---|---|
Vgs(th) (Max) @ Id | 3.5V @ 320µA |
Vgs (Max) | ±20V |
Technology | MOSFET (Metal Oxide) |
Supplier Device Package | PG-TO252-3 |
Series | CoolMOS™ E6 |
Rds On (Max) @ Id, Vgs | 380mOhm @ 3.2A, 10V |
Power Dissipation (Max) | 83W (Tc) |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Package | Tape & Reel (TR) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Product Attribute | Attribute Value |
---|---|
Mounting Type | Surface Mount |
Input Capacitance (Ciss) (Max) @ Vds | 710 pF @ 100 V |
Gate Charge (Qg) (Max) @ Vgs | 39 nC @ 10 V |
FET Type | N-Channel |
FET Feature | - |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Drain to Source Voltage (Vdss) | 650 V |
Current - Continuous Drain (Id) @ 25°C | 10.6A (Tc) |
Base Product Number | IPD65R380 |
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