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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > IPD70N12S311ATMA1
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IPD70N12S311ATMA1

Manufacturer Part Number IPD70N12S311ATMA1
Manufacturer Infineon Technologies
Detailed Description MOSFET N-CH 120V 70A TO252-31
Package PG-TO252-3
In Stock 95345 pcs
Data sheet Mult Dev Pkg Box Chg 3/Jan/2018
Reference Price (In US Dollars)
1 10 100 500 1000
$0.827 $0.742 $0.596 $0.49 $0.406
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Specifications

Product Attribute Attribute Value
Vgs(th) (Max) @ Id 4V @ 83µA
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
Supplier Device Package PG-TO252-3
Series Automotive, AEC-Q101, OptiMOS™
Rds On (Max) @ Id, Vgs 11.1mOhm @ 70A, 10V
Power Dissipation (Max) 125W (Tc)
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Package Tape & Reel (TR)
Operating Temperature -55°C ~ 175°C (TJ)
Product Attribute Attribute Value
Mounting Type Surface Mount
Input Capacitance (Ciss) (Max) @ Vds 4355 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs 65 nC @ 10 V
FET Type N-Channel
FET Feature -
Drive Voltage (Max Rds On, Min Rds On) 10V
Drain to Source Voltage (Vdss) 120 V
Current - Continuous Drain (Id) @ 25°C 70A (Tc)
Base Product Number IPD70

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IPD70N12S311ATMA1 Datasheet PDF

Data sheet