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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > IPD122N10N3GBTMA1
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IPD122N10N3GBTMA1

Manufacturer Part Number IPD122N10N3GBTMA1
Manufacturer Infineon Technologies
Detailed Description MOSFET N-CH 100V 59A TO252-3
Package PG-TO252-3
In Stock 6679 pcs
Data sheet Part Number GuideCover Tape Width Cancellation 14/Jul/2015Cover Tape Width Update 17/Jun/2015Mult Dev EOL 20/Oct/2015
Reference Price (In US Dollars)
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Specifications

Product Attribute Attribute Value
Vgs(th) (Max) @ Id 3.5V @ 46µA
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
Supplier Device Package PG-TO252-3
Series OptiMOS™
Rds On (Max) @ Id, Vgs 12.2mOhm @ 46A, 10V
Power Dissipation (Max) 94W (Tc)
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Package Tape & Reel (TR)
Operating Temperature -55°C ~ 175°C (TJ)
Product Attribute Attribute Value
Mounting Type Surface Mount
Input Capacitance (Ciss) (Max) @ Vds 2500 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs 35 nC @ 10 V
FET Type N-Channel
FET Feature -
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 59A (Tc)
Base Product Number IPD122N

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Data sheet

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