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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > IPD100N04S4L02ATMA1
Infineon Technologies

IPD100N04S4L02ATMA1

Manufacturer Part Number IPD100N04S4L02ATMA1
Manufacturer Infineon Technologies
Detailed Description MOSFET N-CHANNEL_30/40V
Package PG-TO252-3-313
In Stock 72111 pcs
Data sheet Part Number GuideMult Dev Pkg Box Chg 3/Jan/2018Mult Dev Wafer Fab 12/Feb/2019
Reference Price (In US Dollars)
1 10 100 500 1000
$1.1 $0.988 $0.794 $0.653 $0.541
Delivery Time Components-House.com is a Reliable Stocking Distributor of Electronic Parts. We specialize in all Infineon Technologies series electronic components. We have 72111 pieces of Infineon Technologies IPD100N04S4L02ATMA1 in stock available now. Request a quote from electronics components distributor at Components-House.com, our sales team will contact you within 24 hours.
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Specifications

Product Attribute Attribute Value
Vgs(th) (Max) @ Id 2.2V @ 95µA
Vgs (Max) +20V, -16V
Technology MOSFET (Metal Oxide)
Supplier Device Package PG-TO252-3-313
Series Automotive, AEC-Q101, OptiMOS™
Rds On (Max) @ Id, Vgs 1.9mOhm @ 100A, 10V
Power Dissipation (Max) 150W (Tc)
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Package Tape & Reel (TR)
Operating Temperature -55°C ~ 175°C (TJ)
Product Attribute Attribute Value
Mounting Type Surface Mount
Input Capacitance (Ciss) (Max) @ Vds 12800 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs 156 nC @ 10 V
FET Type N-Channel
FET Feature -
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Drain to Source Voltage (Vdss) 40 V
Current - Continuous Drain (Id) @ 25°C 100A (Tc)
Base Product Number IPD100

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IPD100N04S4L02ATMA1 Datasheet PDF

Data sheet