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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > IPD11DP10NMATMA1
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IPD11DP10NMATMA1

Manufacturer Part Number IPD11DP10NMATMA1
Manufacturer Infineon Technologies
Detailed Description TRENCH >=100V PG-TO252-3
Package PG-TO252-3
In Stock 121305 pcs
Data sheet OptiMOS Dev A/T Add 3/Feb/2022
Reference Price (In US Dollars)
1 10 100 500 1000
$0.731 $0.655 $0.527 $0.433 $0.358
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Specifications

Product Attribute Attribute Value
Vgs(th) (Max) @ Id 4V @ 1.7mA
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
Supplier Device Package PG-TO252-3
Series OptiMOS™
Rds On (Max) @ Id, Vgs 111mOhm @ 18A, 10V
Power Dissipation (Max) 3W (Ta), 125W (Tc)
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Package Tape & Reel (TR)
Operating Temperature -55°C ~ 175°C (TJ)
Product Attribute Attribute Value
Mounting Type Surface Mount
Input Capacitance (Ciss) (Max) @ Vds 3200 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs 74 nC @ 10 V
FET Type P-Channel
FET Feature -
Drive Voltage (Max Rds On, Min Rds On) 10V
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 3.4A (Ta), 22A (Tc)
Base Product Number IPD11D

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IPD11DP10NMATMA1 Datasheet PDF

Data sheet

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