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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > IPB083N10N3GATMA1
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IPB083N10N3GATMA1

Manufacturer Part Number IPB083N10N3GATMA1
Manufacturer Infineon Technologies
Detailed Description MOSFET N-CH 100V 80A D2PAK
Package PG-TO263-3
In Stock 97608 pcs
Data sheet Part Number GuideMult Dev Pkg Box Chg 3/Jan/2018Mult Dev Wafer Chgs 22/Dec/2021
Reference Price (In US Dollars)
1 10 100 500
$0.71 $0.638 $0.513 $0.421
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Specifications

Product Attribute Attribute Value
Vgs(th) (Max) @ Id 3.5V @ 75µA
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
Supplier Device Package PG-TO263-3
Series OptiMOS™
Rds On (Max) @ Id, Vgs 8.3mOhm @ 73A, 10V
Power Dissipation (Max) 125W (Tc)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Package Tape & Reel (TR)
Operating Temperature -55°C ~ 175°C (TJ)
Product Attribute Attribute Value
Mounting Type Surface Mount
Input Capacitance (Ciss) (Max) @ Vds 3980 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs 55 nC @ 10 V
FET Type N-Channel
FET Feature -
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 80A (Tc)
Base Product Number IPB083

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IPB083N10N3GATMA1 Datasheet PDF

Data sheet

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