IPB072N15N3GE8187ATMA1
| Manufacturer Part Number | IPB072N15N3GE8187ATMA1 |
|---|---|
| Manufacturer | Infineon Technologies |
| Detailed Description | MOSFET N-CH 150V 100A TO263-3 |
| Package | PG-TO263-3-2 |
| In Stock | 6063 pcs |
| Data sheet | Part Number GuideMult Dev Pkg Box Chg 3/Jan/2018Multiple Changes 09/Jul/2014Mult Dev Wafer Chgs 22/Dec/2021 |
Reference Price (In US Dollars)
Delivery Time
Components-House.com is a Reliable Stocking Distributor of Electronic Parts. We specialize in all Infineon Technologies series electronic components. We have 6063 pieces of Infineon Technologies IPB072N15N3GE8187ATMA1 in stock available now. Request a quote from electronics components distributor at Components-House.com, our sales team will contact you within 24 hours.
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Specifications
| Product Attribute | Attribute Value |
|---|---|
| Vgs(th) (Max) @ Id | 4V @ 270µA |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Supplier Device Package | PG-TO263-3-2 |
| Series | OptiMOS™ |
| Rds On (Max) @ Id, Vgs | 7.2mOhm @ 100A, 10V |
| Power Dissipation (Max) | 300W (Tc) |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Package | Tape & Reel (TR) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Product Attribute | Attribute Value |
|---|---|
| Mounting Type | Surface Mount |
| Input Capacitance (Ciss) (Max) @ Vds | 5470 pF @ 75 V |
| Gate Charge (Qg) (Max) @ Vgs | 93 nC @ 10 V |
| FET Type | N-Channel |
| FET Feature | - |
| Drive Voltage (Max Rds On, Min Rds On) | 8V, 10V |
| Drain to Source Voltage (Vdss) | 150 V |
| Current - Continuous Drain (Id) @ 25°C | 100A (Tc) |
| Base Product Number | IPB072N |
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