IPB065N10N3GATMA1
Manufacturer Part Number | IPB065N10N3GATMA1 |
---|---|
Manufacturer | Infineon Technologies |
Detailed Description | MOSFET N-CH 100V 80A D2PAK |
Package | PG-TO263-3 |
In Stock | 4241 pcs |
Data sheet | Part Number GuideMult Dev Pkg Box Chg 3/Jan/2018Mult Dev EOL 23/Sep/2022Mult Dev Wafer Chgs 22/Dec/2021 |
Reference Price (In US Dollars)
Delivery Time
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Specifications
Product Attribute | Attribute Value |
---|---|
Vgs(th) (Max) @ Id | 3.5V @ 90µA |
Vgs (Max) | ±20V |
Technology | MOSFET (Metal Oxide) |
Supplier Device Package | PG-TO263-3 |
Series | OptiMOS™ |
Rds On (Max) @ Id, Vgs | 6.5mOhm @ 80A, 10V |
Power Dissipation (Max) | 150W (Tc) |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Package | Tape & Reel (TR) |
Operating Temperature | -55°C ~ 175°C (TJ) |
Product Attribute | Attribute Value |
---|---|
Mounting Type | Surface Mount |
Input Capacitance (Ciss) (Max) @ Vds | 4910 pF @ 50 V |
Gate Charge (Qg) (Max) @ Vgs | 64 nC @ 10 V |
FET Type | N-Channel |
FET Feature | - |
Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
Drain to Source Voltage (Vdss) | 100 V |
Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
Base Product Number | IPB065 |
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