IMBG65R083M1HXTMA1
| Manufacturer Part Number | IMBG65R083M1HXTMA1 |
|---|---|
| Manufacturer | Infineon Technologies |
| Detailed Description | SILICON CARBIDE MOSFET PG-TO263- |
| Package | PG-TO263-7-12 |
| In Stock | 13387 pcs |
| Data sheet |
Reference Price (In US Dollars)
| 1 | 10 | 100 | 500 |
|---|---|---|---|
| $3.944 | $3.561 | $2.949 | $2.568 |
Delivery Time
Components-House.com is a Reliable Stocking Distributor of Electronic Parts. We specialize in all Infineon Technologies series electronic components. We have 13387 pieces of Infineon Technologies IMBG65R083M1HXTMA1 in stock available now. Request a quote from electronics components distributor at Components-House.com, our sales team will contact you within 24 hours.
RFQ Email: info@Components-House.net
RFQ Email: info@Components-House.net
Specifications
| Product Attribute | Attribute Value |
|---|---|
| Vgs(th) (Max) @ Id | 5.7V @ 3.3mA |
| Vgs (Max) | +23V, -5V |
| Technology | SiCFET (Silicon Carbide) |
| Supplier Device Package | PG-TO263-7-12 |
| Series | CoolSIC™ M1 |
| Rds On (Max) @ Id, Vgs | 111mOhm @ 11.2A, 18V |
| Power Dissipation (Max) | 126W (Tc) |
| Package / Case | TO-263-8, D²Pak (7 Leads + Tab), TO-263CA |
| Package | Tape & Reel (TR) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Product Attribute | Attribute Value |
|---|---|
| Mounting Type | Surface Mount |
| Input Capacitance (Ciss) (Max) @ Vds | 624 pF @ 400 V |
| Gate Charge (Qg) (Max) @ Vgs | 19 nC @ 18 V |
| FET Type | N-Channel |
| FET Feature | - |
| Drive Voltage (Max Rds On, Min Rds On) | 18V |
| Drain to Source Voltage (Vdss) | 650 V |
| Current - Continuous Drain (Id) @ 25°C | 28A (Tc) |
| Base Product Number | IMBG65R |
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