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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > IMBF170R650M1XTMA1
Infineon Technologies

IMBF170R650M1XTMA1

Manufacturer Part Number IMBF170R650M1XTMA1
Manufacturer Infineon Technologies
Detailed Description SICFET N-CH 1700V 7.4A TO263-7
Package PG-TO263-7-13
In Stock 23230 pcs
Data sheet Mult Dev DC Chg 5/May/2021
Reference Price (In US Dollars)
1 10 100 500
$2.987 $2.698 $2.234 $1.945
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Specifications

Product Attribute Attribute Value
Vgs(th) (Max) @ Id 5.7V @ 1.7mA
Vgs (Max) +20V, -10V
Technology SiCFET (Silicon Carbide)
Supplier Device Package PG-TO263-7-13
Series CoolSiC™
Rds On (Max) @ Id, Vgs 650mOhm @ 1.5A, 15V
Power Dissipation (Max) 88W (Tc)
Package / Case TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Package Tape & Reel (TR)
Operating Temperature -55°C ~ 175°C (TJ)
Product Attribute Attribute Value
Mounting Type Surface Mount
Input Capacitance (Ciss) (Max) @ Vds 422 pF @ 1000 V
Gate Charge (Qg) (Max) @ Vgs 8 nC @ 12 V
FET Type N-Channel
FET Feature -
Drive Voltage (Max Rds On, Min Rds On) 12V, 15V
Drain to Source Voltage (Vdss) 1700 V
Current - Continuous Drain (Id) @ 25°C 7.4A (Tc)
Base Product Number IMBF170

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IMBF170R650M1XTMA1 Datasheet PDF

Data sheet