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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > IMBG120R060M1HXTMA1
Infineon Technologies

IMBG120R060M1HXTMA1

Manufacturer Part Number IMBG120R060M1HXTMA1
Manufacturer Infineon Technologies
Detailed Description SICFET N-CH 1.2KV 36A TO263
Package PG-TO263-7-12
In Stock 8415 pcs
Data sheet Orderable Part Number OPN Translation TableMult Dev DC Chg 5/May/2021
Reference Price (In US Dollars)
1 10 100 500
$5.862 $5.387 $4.55 $4.047
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Specifications

Product Attribute Attribute Value
Vgs(th) (Max) @ Id 5.7V @ 5.6mA
Vgs (Max) +18V, -15V
Technology SiCFET (Silicon Carbide)
Supplier Device Package PG-TO263-7-12
Series CoolSiC™
Rds On (Max) @ Id, Vgs 83mOhm @ 13A, 18V
Power Dissipation (Max) 181W (Tc)
Package / Case TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Package Tape & Reel (TR)
Product Attribute Attribute Value
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Input Capacitance (Ciss) (Max) @ Vds 1145 pF @ 800 V
Gate Charge (Qg) (Max) @ Vgs 34 nC @ 18 V
FET Type N-Channel
FET Feature Standard
Drain to Source Voltage (Vdss) 1200 V
Current - Continuous Drain (Id) @ 25°C 36A (Tc)
Base Product Number IMBG120

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IMBG120R060M1HXTMA1 Datasheet PDF

Data sheet