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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > BSZ180P03NS3EGATMA1
Infineon Technologies

BSZ180P03NS3EGATMA1

Manufacturer Part Number BSZ180P03NS3EGATMA1
Manufacturer Infineon Technologies
Detailed Description MOSFET P-CH 30V 9A/39.5A TSDSON
Package PG-TSDSON-8
In Stock 277351 pcs
Data sheet Part Number GuideMult Dev Reel Design Chg 2/Dec/2019Mult Dev Pkg Box Chg 3/Jan/2018Multiple Changes 09/Jul/2014
Reference Price (In US Dollars)
1 10 100 500 1000 2000
$0.323 $0.286 $0.219 $0.174 $0.139 $0.126
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Specifications

Product Attribute Attribute Value
Vgs(th) (Max) @ Id 3.1V @ 48µA
Vgs (Max) ±25V
Technology MOSFET (Metal Oxide)
Supplier Device Package PG-TSDSON-8
Series OptiMOS™
Rds On (Max) @ Id, Vgs 18mOhm @ 20A, 10V
Power Dissipation (Max) 2.1W (Ta), 40W (Tc)
Package / Case 8-PowerTDFN
Package Tape & Reel (TR)
Operating Temperature -55°C ~ 150°C (TJ)
Product Attribute Attribute Value
Mounting Type Surface Mount
Input Capacitance (Ciss) (Max) @ Vds 2220 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs 30 nC @ 10 V
FET Type P-Channel
FET Feature -
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 9A (Ta), 39.5A (Tc)
Base Product Number BSZ180

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BSZ180P03NS3EGATMA1 Datasheet PDF

Data sheet