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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > BSZ12DN20NS3G
Infineon Technologies

BSZ12DN20NS3G

Manufacturer Part Number BSZ12DN20NS3G
Manufacturer Infineon Technologies
Detailed Description BSZ12DN20 - 12V-300V N-CHANNEL P
Package PG-TSDSON-8
In Stock 4014 pcs
Data sheet
Reference Price (In US Dollars)
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Specifications

Product Attribute Attribute Value
Vgs(th) (Max) @ Id 4V @ 25µA
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
Supplier Device Package PG-TSDSON-8
Series OptiMOS™ 3
Rds On (Max) @ Id, Vgs 125mOhm @ 5.7A, 10V
Power Dissipation (Max) 50W (Tc)
Package / Case 8-PowerTDFN
Package Bulk
Product Attribute Attribute Value
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Input Capacitance (Ciss) (Max) @ Vds 680 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs 8.7 nC @ 10 V
FET Type N-Channel
FET Feature -
Drive Voltage (Max Rds On, Min Rds On) 10V
Drain to Source Voltage (Vdss) 200 V
Current - Continuous Drain (Id) @ 25°C 11.3A (Tc)

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BSZ12DN20NS3G Datasheet PDF