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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > BSZ100N06LS3GATMA1
Infineon Technologies

BSZ100N06LS3GATMA1

Manufacturer Part Number BSZ100N06LS3GATMA1
Manufacturer Infineon Technologies
Detailed Description MOSFET N-CH 60V 11A/20A 8TSDSON
Package PG-TSDSON-8
In Stock 186921 pcs
Data sheet Part Number GuideMult Dev Reel Design Chg 2/Dec/2019Mult Dev Pkg Box Chg 3/Jan/2018Multiple Changes 09/Jul/2014OptiMOS Assembly Site Add 2/Jan/2018
Reference Price (In US Dollars)
1 10 100 500 1000 2000
$0.429 $0.383 $0.298 $0.247 $0.195 $0.182
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Specifications

Product Attribute Attribute Value
Vgs(th) (Max) @ Id 2.2V @ 23µA
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
Supplier Device Package PG-TSDSON-8
Series OptiMOS™
Rds On (Max) @ Id, Vgs 10mOhm @ 20A, 10V
Power Dissipation (Max) 2.1W (Ta), 50W (Tc)
Package / Case 8-PowerVDFN
Package Tape & Reel (TR)
Operating Temperature -55°C ~ 150°C (TJ)
Product Attribute Attribute Value
Mounting Type Surface Mount
Input Capacitance (Ciss) (Max) @ Vds 3500 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs 45 nC @ 10 V
FET Type N-Channel
FET Feature -
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 11A (Ta), 20A (Tc)
Base Product Number BSZ100

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BSZ100N06LS3GATMA1 Datasheet PDF

Data sheet