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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > CGD65B200S2-T13

CGD65B200S2-T13

Manufacturer Part Number CGD65B200S2-T13
Manufacturer Cambridge GaN Devices
Detailed Description 650V GAN HEMT, 200MOHM, DFN5X6.
Package 8-DFN (5x6)
In Stock 40497 pcs
Data sheet CGD65B200S2
Reference Price (In US Dollars)
1 10 100 500 1000 2000
$1.853 $1.663 $1.362 $1.16 $0.978 $0.929
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Specifications

Product Attribute Attribute Value
Vgs(th) (Max) @ Id 4.2V @ 2.75mA
Vgs (Max) +20V, -1V
Technology GaNFET (Gallium Nitride)
Supplier Device Package 8-DFN (5x6)
Series ICeGaN™
Rds On (Max) @ Id, Vgs 280mOhm @ 600mA, 12V
Package / Case 8-PowerVDFN
Package Tape & Reel (TR)
Product Attribute Attribute Value
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Gate Charge (Qg) (Max) @ Vgs 1.4 nC @ 12 V
FET Type -
FET Feature Current Sensing
Drive Voltage (Max Rds On, Min Rds On) 9V, 20V
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 8.5A (Tc)

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CGD65B200S2-T13 Datasheet PDF

Data sheet

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