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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > CGD65A055S2-T07

CGD65A055S2-T07

Manufacturer Part Number CGD65A055S2-T07
Manufacturer Cambridge GaN Devices
Detailed Description 650V GAN HEMT, 55MOHM, DFN8X8. W
Package 16-DFN (8x8)
In Stock 8483 pcs
Data sheet CGD65A055S2
Reference Price (In US Dollars)
1 10 100 500
$6.303 $5.794 $4.894 $4.353
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Specifications

Product Attribute Attribute Value
Vgs(th) (Max) @ Id 4.2V @ 10mA
Vgs (Max) +20V, -1V
Technology GaNFET (Gallium Nitride)
Supplier Device Package 16-DFN (8x8)
Series ICeGaN™
Rds On (Max) @ Id, Vgs 77mOhm @ 2.2A, 12V
Package / Case 16-PowerVDFN
Package Tape & Reel (TR)
Product Attribute Attribute Value
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Gate Charge (Qg) (Max) @ Vgs 6 nC @ 12 V
FET Feature Current Sensing
Drive Voltage (Max Rds On, Min Rds On) 12V
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 27A (Tc)

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CGD65A055S2-T07 Datasheet PDF

Data sheet