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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > CGD65A130S2-T13

CGD65A130S2-T13

Manufacturer Part Number CGD65A130S2-T13
Manufacturer Cambridge GaN Devices
Detailed Description 650V GAN HEMT, 130MOHM, DFN8X8.
Package 16-DFN (8x8)
In Stock 31610 pcs
Data sheet CGD65A130S2
Reference Price (In US Dollars)
1 10 100 500 1000
$2.415 $2.181 $1.806 $1.573 $1.37
Delivery Time Components-House.com is a Reliable Stocking Distributor of Electronic Parts. We specialize in all Cambridge GaN Devices series electronic components. We have 31610 pieces of Cambridge GaN Devices CGD65A130S2-T13 in stock available now. Request a quote from electronics components distributor at Components-House.com, our sales team will contact you within 24 hours.
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Specifications

Product Attribute Attribute Value
Vgs(th) (Max) @ Id 4.2V @ 4.2mA
Vgs (Max) +20V, -1V
Technology GaNFET (Gallium Nitride)
Supplier Device Package 16-DFN (8x8)
Series ICeGaN™
Rds On (Max) @ Id, Vgs 182mOhm @ 900mA, 12V
Package / Case 16-PowerVDFN
Package Tape & Reel (TR)
Product Attribute Attribute Value
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Gate Charge (Qg) (Max) @ Vgs 2.3 nC @ 12 V
FET Type -
FET Feature Current Sensing
Drive Voltage (Max Rds On, Min Rds On) 12V
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 12A (Tc)

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CGD65A130S2-T13 Datasheet PDF

Data sheet

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