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Home > Products > Discrete Semiconductor Products > Transistors - IGBTs - Single > HGT1S12N60A4DS
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HGT1S12N60A4DS

Manufacturer Part Number HGT1S12N60A4DS
Manufacturer onsemi
Detailed Description IGBT 600V 54A 167W D2PAK
Package D²PAK (TO-263)
In Stock 6290 pcs
Data sheet Description Chg 01/Apr/2016TO263 31/Aug/2016Logo 17/Aug/2017Mult Devices 24/Oct/2017Mult Dev EOL 29/Jan/2021onsemi REACHonsemi RoHSHGTG12N60A4D, HGTP12N60A4D, HGT1S12N60A4DSMult Dev Assembly/Material Chgs 15/Mar/2018
Reference Price (In US Dollars)
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Specifications

Product Attribute Attribute Value
Voltage - Collector Emitter Breakdown (Max) 600 V
Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 12A
Test Condition 390V, 12A, 10Ohm, 15V
Td (on/off) @ 25°C 17ns/96ns
Switching Energy 55µJ (on), 50µJ (off)
Supplier Device Package D²PAK (TO-263)
Series -
Reverse Recovery Time (trr) 30 ns
Power - Max 167 W
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Product Attribute Attribute Value
Package Tube
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Input Type Standard
IGBT Type -
Gate Charge 78 nC
Current - Collector Pulsed (Icm) 96 A
Current - Collector (Ic) (Max) 54 A
Base Product Number HGT1S12

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HGT1S12N60A4DS Datasheet PDF

Data sheet

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