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Home > Products > Discrete Semiconductor Products > Transistors - IGBTs - Single > HGT1S10N120BNST
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HGT1S10N120BNST

Manufacturer Part Number HGT1S10N120BNST
Manufacturer onsemi
Detailed Description IGBT 1200V 35A 298W TO263AB
Package D²PAK (TO-263)
In Stock 44835 pcs
Data sheet Description Chg 01/Apr/2016TO263 31/Aug/2016Logo 17/Aug/2017Mult Dev Box Chgs 1/Jul/2021onsemi REACHonsemi RoHSAssembly Change 09/May/2023HGT(G,P)10N120BN, HGT1S10N120BNS
Reference Price (In US Dollars)
1 10 100
$1.122 $1.008 $0.826
Delivery Time Components-House.com is a Reliable Stocking Distributor of Electronic Parts. We specialize in all onsemi series electronic components. We have 44835 pieces of onsemi HGT1S10N120BNST in stock available now. Request a quote from electronics components distributor at Components-House.com, our sales team will contact you within 24 hours.
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Specifications

Product Attribute Attribute Value
Voltage - Collector Emitter Breakdown (Max) 1200 V
Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 10A
Test Condition 960V, 10A, 10Ohm, 15V
Td (on/off) @ 25°C 23ns/165ns
Switching Energy 320µJ (on), 800µJ (off)
Supplier Device Package D²PAK (TO-263)
Series -
Power - Max 298 W
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Product Attribute Attribute Value
Package Tape & Reel (TR)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Input Type Standard
IGBT Type NPT
Gate Charge 100 nC
Current - Collector Pulsed (Icm) 80 A
Current - Collector (Ic) (Max) 35 A
Base Product Number HGT1S10

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