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Home > Products > Discrete Semiconductor Products > Transistors - IGBTs - Single > HGT1S10N120BNS
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HGT1S10N120BNS

Manufacturer Part Number HGT1S10N120BNS
Manufacturer onsemi
Detailed Description IGBT 1200V 35A 298W TO263AB
Package D²PAK (TO-263)
In Stock 5133 pcs
Data sheet Description Chg 01/Apr/2016Logo 17/Aug/2017Mult Devices 24/Oct/2017Mult Dev Box Chgs 1/Jul/2021Mult Dev EOL 30/Jun/2022onsemi REACHonsemi RoHSMultiple Parts 23/Jun/2022HGT(G,P)10N120BN, HGT1S10N120BNS
Reference Price (In US Dollars)
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Specifications

Product Attribute Attribute Value
Voltage - Collector Emitter Breakdown (Max) 1200 V
Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 10A
Test Condition 960V, 10A, 10Ohm, 15V
Td (on/off) @ 25°C 23ns/165ns
Switching Energy 320µJ (on), 800µJ (off)
Supplier Device Package D²PAK (TO-263)
Series -
Power - Max 298 W
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Product Attribute Attribute Value
Package Tube
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Input Type Standard
IGBT Type NPT
Gate Charge 100 nC
Current - Collector Pulsed (Icm) 80 A
Current - Collector (Ic) (Max) 35 A
Base Product Number HGT1S10

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HGT1S10N120BNS Datasheet PDF

Data sheet

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