C2M0045170D
Reference Price (In US Dollars)
1
10
100
$40.691
$38.592
$34.917
Delivery Time
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Specifications
Product Attribute
Attribute Value
Vgs(th) (Max) @ Id
4V @ 18mA
Vgs (Max)
+25V, -10V
Technology
SiCFET (Silicon Carbide)
Supplier Device Package
TO-247-3
Series
C2M™
Rds On (Max) @ Id, Vgs
70mOhm @ 50A, 20V
Power Dissipation (Max)
520W (Tc)
Package / Case
TO-247-3
Package
Tube
Operating Temperature
-40°C ~ 150°C (TJ)
Product Attribute
Attribute Value
Mounting Type
Through Hole
Input Capacitance (Ciss) (Max) @ Vds
3672 pF @ 1000 V
Gate Charge (Qg) (Max) @ Vgs
188 nC @ 20 V
FET Type
N-Channel
FET Feature
-
Drive Voltage (Max Rds On, Min Rds On)
20V
Drain to Source Voltage (Vdss)
1700 V
Current - Continuous Drain (Id) @ 25°C
72A (Tc)
Base Product Number
C2M0045170
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C2M0045170D Datasheet PDF
Data sheet
Datasheet File Browse
