C2M0040120D
Reference Price (In US Dollars)
1
10
100
$18.586
$17.341
$15.057
Delivery Time
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Specifications
Product Attribute
Attribute Value
Vgs(th) (Max) @ Id
2.8V @ 10mA
Vgs (Max)
+25V, -10V
Technology
SiCFET (Silicon Carbide)
Supplier Device Package
TO-247-3
Series
Z-FET™
Rds On (Max) @ Id, Vgs
52mOhm @ 40A, 20V
Power Dissipation (Max)
330W (Tc)
Package / Case
TO-247-3
Package
Tube
Operating Temperature
-55°C ~ 150°C (TJ)
Product Attribute
Attribute Value
Mounting Type
Through Hole
Input Capacitance (Ciss) (Max) @ Vds
1893 pF @ 1000 V
Gate Charge (Qg) (Max) @ Vgs
115 nC @ 20 V
FET Type
N-Channel
FET Feature
-
Drive Voltage (Max Rds On, Min Rds On)
20V
Drain to Source Voltage (Vdss)
1200 V
Current - Continuous Drain (Id) @ 25°C
60A (Tc)
Base Product Number
C2M0040120
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C2M0040120D Datasheet PDF
Data sheet
Datasheet File Browse
