SIRA10BDP-T1-GE3
| Manufacturer Part Number | SIRA10BDP-T1-GE3 |
|---|---|
| Manufacturer | Vishay Siliconix |
| Detailed Description | MOSFET N-CH 30V 30A/60A PPAK SO8 |
| Package | PowerPAK® SO-8 |
| In Stock | 361553 pcs |
| Data sheet | SIRA 04/Mar/2022SIRA10BDP |
Reference Price (In US Dollars)
| 1 | 10 | 100 | 500 | 1000 |
|---|---|---|---|---|
| $0.308 | $0.271 | $0.208 | $0.164 | $0.132 |
Delivery Time
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Specifications
| Product Attribute | Attribute Value |
|---|---|
| Vgs(th) (Max) @ Id | 2.4V @ 250µA |
| Vgs (Max) | +20V, -16V |
| Technology | MOSFET (Metal Oxide) |
| Supplier Device Package | PowerPAK® SO-8 |
| Series | TrenchFET® Gen IV |
| Rds On (Max) @ Id, Vgs | 3.6mOhm @ 10A, 10V |
| Power Dissipation (Max) | 5W (Ta), 43W (Tc) |
| Package / Case | PowerPAK® SO-8 |
| Package | Tape & Reel (TR) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Product Attribute | Attribute Value |
|---|---|
| Mounting Type | Surface Mount |
| Input Capacitance (Ciss) (Max) @ Vds | 1710 pF @ 15 V |
| Gate Charge (Qg) (Max) @ Vgs | 36.2 nC @ 10 V |
| FET Type | N-Channel |
| FET Feature | - |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Drain to Source Voltage (Vdss) | 30 V |
| Current - Continuous Drain (Id) @ 25°C | 30A (Ta), 60A (Tc) |
| Base Product Number | SIRA10 |
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