SIR892DP-T1-GE3
| Manufacturer Part Number | SIR892DP-T1-GE3 |
|---|---|
| Manufacturer | Vishay Siliconix |
| Detailed Description | MOSFET N-CH 25V 50A PPAK SO-8 |
| Package | PowerPAK® SO-8 |
| In Stock | 4767 pcs |
| Data sheet | Multiple Fabracation Changes09/Jul/2014Mult Mosfet EOL 30/Aug/2018SIR892DP |
Reference Price (In US Dollars)
Delivery Time
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Specifications
| Product Attribute | Attribute Value |
|---|---|
| Vgs(th) (Max) @ Id | 2.6V @ 250µA |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Supplier Device Package | PowerPAK® SO-8 |
| Series | TrenchFET® |
| Rds On (Max) @ Id, Vgs | 3.2mOhm @ 10A, 10V |
| Power Dissipation (Max) | 5W (Ta), 50W (Tc) |
| Package / Case | PowerPAK® SO-8 |
| Package | Tape & Reel (TR) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Product Attribute | Attribute Value |
|---|---|
| Mounting Type | Surface Mount |
| Input Capacitance (Ciss) (Max) @ Vds | 2645 pF @ 10 V |
| Gate Charge (Qg) (Max) @ Vgs | 60 nC @ 10 V |
| FET Type | N-Channel |
| FET Feature | - |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Drain to Source Voltage (Vdss) | 25 V |
| Current - Continuous Drain (Id) @ 25°C | 50A (Tc) |
| Base Product Number | SIR892 |
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