SI8809EDB-T2-E1
| Manufacturer Part Number | SI8809EDB-T2-E1 |
|---|---|
| Manufacturer | Vishay Siliconix |
| Detailed Description | MOSFET P-CH 20V 1.9A MICROFOOT |
| Package | 4-Microfoot |
| In Stock | 5448 pcs |
| Data sheet | Material ComplianceSI8809EDB-T2-E1 |
Reference Price (In US Dollars)
Delivery Time
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Specifications
| Product Attribute | Attribute Value |
|---|---|
| Vgs(th) (Max) @ Id | 900mV @ 250µA |
| Vgs (Max) | ±8V |
| Technology | MOSFET (Metal Oxide) |
| Supplier Device Package | 4-Microfoot |
| Series | TrenchFET® |
| Rds On (Max) @ Id, Vgs | 90mOhm @ 1.5A, 4.5V |
| Power Dissipation (Max) | 500mW (Ta) |
| Package / Case | 4-XFBGA |
| Package | Tape & Reel (TR) |
| Product Attribute | Attribute Value |
|---|---|
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Gate Charge (Qg) (Max) @ Vgs | 15 nC @ 8 V |
| FET Type | P-Channel |
| FET Feature | - |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Drain to Source Voltage (Vdss) | 20 V |
| Current - Continuous Drain (Id) @ 25°C | 1.94 (Ta) |
| Base Product Number | SI8809 |
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