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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > SI8800EDB-T2-E1
Vishay Siliconix

SI8800EDB-T2-E1

Manufacturer Part Number SI8800EDB-T2-E1
Manufacturer Vishay Siliconix
Detailed Description MOSFET N-CH 20V 4MICROFOOT
Package 4-Microfoot
In Stock 574591 pcs
Data sheet Material ComplianceSI8800EDB
Reference Price (In US Dollars)
1 10 100 500 1000
$0.172 $0.146 $0.109 $0.085 $0.066
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Specifications

Product Attribute Attribute Value
Vgs(th) (Max) @ Id 1V @ 250µA
Vgs (Max) ±8V
Technology MOSFET (Metal Oxide)
Supplier Device Package 4-Microfoot
Series TrenchFET®
Rds On (Max) @ Id, Vgs 80mOhm @ 1A, 4.5V
Power Dissipation (Max) 500mW (Ta)
Package / Case 4-XFBGA, CSPBGA
Package Tape & Reel (TR)
Product Attribute Attribute Value
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Gate Charge (Qg) (Max) @ Vgs 8.3 nC @ 8 V
FET Type N-Channel
FET Feature -
Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 2A (Ta)
Base Product Number SI8800

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SI8800EDB-T2-E1 Datasheet PDF

Data sheet