SI8800EDB-T2-E1
Manufacturer Part Number | SI8800EDB-T2-E1 |
---|---|
Manufacturer | Vishay Siliconix |
Detailed Description | MOSFET N-CH 20V 4MICROFOOT |
Package | 4-Microfoot |
In Stock | 574591 pcs |
Data sheet | Material ComplianceSI8800EDB |
Reference Price (In US Dollars)
1 | 10 | 100 | 500 | 1000 |
---|---|---|---|---|
$0.172 | $0.146 | $0.109 | $0.085 | $0.066 |
Delivery Time
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RFQ Email: info@Components-House.net
Specifications
Product Attribute | Attribute Value |
---|---|
Vgs(th) (Max) @ Id | 1V @ 250µA |
Vgs (Max) | ±8V |
Technology | MOSFET (Metal Oxide) |
Supplier Device Package | 4-Microfoot |
Series | TrenchFET® |
Rds On (Max) @ Id, Vgs | 80mOhm @ 1A, 4.5V |
Power Dissipation (Max) | 500mW (Ta) |
Package / Case | 4-XFBGA, CSPBGA |
Package | Tape & Reel (TR) |
Product Attribute | Attribute Value |
---|---|
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Gate Charge (Qg) (Max) @ Vgs | 8.3 nC @ 8 V |
FET Type | N-Channel |
FET Feature | - |
Drive Voltage (Max Rds On, Min Rds On) | 1.5V, 4.5V |
Drain to Source Voltage (Vdss) | 20 V |
Current - Continuous Drain (Id) @ 25°C | 2A (Ta) |
Base Product Number | SI8800 |
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