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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > SI8497DB-T2-E1
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SI8497DB-T2-E1

Manufacturer Part Number SI8497DB-T2-E1
Manufacturer Vishay Siliconix
Detailed Description MOSFET P-CH 30V 13A 6MICROFOOT
Package 6-microfoot
In Stock 420160 pcs
Data sheet Material ComplianceSi8497DB
Reference Price (In US Dollars)
3000
$0.084
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Specifications

Product Attribute Attribute Value
Vgs(th) (Max) @ Id 1.1V @ 250µA
Vgs (Max) ±12V
Technology MOSFET (Metal Oxide)
Supplier Device Package 6-microfoot
Series TrenchFET®
Rds On (Max) @ Id, Vgs 53mOhm @ 1.5A, 4.5V
Power Dissipation (Max) 2.77W (Ta), 13W (Tc)
Package / Case 6-UFBGA
Package Tape & Reel (TR)
Operating Temperature -55°C ~ 150°C (TJ)
Product Attribute Attribute Value
Mounting Type Surface Mount
Input Capacitance (Ciss) (Max) @ Vds 1320 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs 49 nC @ 10 V
FET Type P-Channel
FET Feature -
Drive Voltage (Max Rds On, Min Rds On) 2V, 4.5V
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 13A (Tc)
Base Product Number SI8497

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SI8497DB-T2-E1 Datasheet PDF

Data sheet