SI8469DB-T2-E1
Manufacturer Part Number | SI8469DB-T2-E1 |
---|---|
Manufacturer | Vishay Siliconix |
Detailed Description | MOSFET P-CH 8V 4.6A 4MICROFOOT |
Package | 4-Microfoot |
In Stock | 5876 pcs |
Data sheet | Material ComplianceMultiple Devices 14/Mar/2018SI8469DB-T2-E1 |
Reference Price (In US Dollars)
Delivery Time
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Specifications
Product Attribute | Attribute Value |
---|---|
Vgs(th) (Max) @ Id | 800mV @ 250µA |
Vgs (Max) | ±5V |
Technology | MOSFET (Metal Oxide) |
Supplier Device Package | 4-Microfoot |
Series | TrenchFET® |
Rds On (Max) @ Id, Vgs | 64mOhm @ 1.5A, 4.5V |
Power Dissipation (Max) | 780mW (Ta), 1.8W (Tc) |
Package / Case | 4-UFBGA |
Package | Tape & Reel (TR) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Product Attribute | Attribute Value |
---|---|
Mounting Type | Surface Mount |
Input Capacitance (Ciss) (Max) @ Vds | 900 pF @ 4 V |
Gate Charge (Qg) (Max) @ Vgs | 17 nC @ 4.5 V |
FET Type | P-Channel |
FET Feature | - |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V |
Drain to Source Voltage (Vdss) | 8 V |
Current - Continuous Drain (Id) @ 25°C | 4.6A (Ta) |
Base Product Number | SI8469 |
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