SI6562CDQ-T1-GE3
| Manufacturer Part Number | SI6562CDQ-T1-GE3 |
|---|---|
| Manufacturer | Vishay Siliconix |
| Detailed Description | MOSFET N/P-CH 20V 6.7A 8-TSSOP |
| Package | 8-TSSOP |
| In Stock | 186969 pcs |
| Data sheet | Material ComplianceEpoxy Materials 07/Jan/2022SI6562CDQ |
Reference Price (In US Dollars)
| 1 | 10 | 100 | 500 | 1000 |
|---|---|---|---|---|
| $0.411 | $0.369 | $0.287 | $0.237 | $0.187 |
Delivery Time
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Specifications
| Product Attribute | Attribute Value |
|---|---|
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |
| Technology | MOSFET (Metal Oxide) |
| Supplier Device Package | 8-TSSOP |
| Series | TrenchFET® |
| Rds On (Max) @ Id, Vgs | 22mOhm @ 5.7A, 4.5V |
| Power - Max | 1.6W, 1.7W |
| Package / Case | 8-TSSOP (0.173", 4.40mm Width) |
| Package | Tape & Reel (TR) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Product Attribute | Attribute Value |
|---|---|
| Mounting Type | Surface Mount |
| Input Capacitance (Ciss) (Max) @ Vds | 850pF @ 10V |
| Gate Charge (Qg) (Max) @ Vgs | 23nC @ 10V |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 6.7A, 6.1A |
| Configuration | N and P-Channel |
| Base Product Number | SI6562 |
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