SI6473DQ-T1-E3
Manufacturer Part Number | SI6473DQ-T1-E3 |
---|---|
Manufacturer | Vishay Siliconix |
Detailed Description | MOSFET P-CH 20V 6.2A 8TSSOP |
Package | 8-TSSOP |
In Stock | 4536 pcs |
Data sheet | Material ComplianceSI6473DQ |
Reference Price (In US Dollars)
Delivery Time
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Specifications
Product Attribute | Attribute Value |
---|---|
Vgs(th) (Max) @ Id | 450mV @ 250µA (Min) |
Vgs (Max) | ±8V |
Technology | MOSFET (Metal Oxide) |
Supplier Device Package | 8-TSSOP |
Series | TrenchFET® |
Rds On (Max) @ Id, Vgs | 12.5mOhm @ 9.5A, 4.5V |
Power Dissipation (Max) | 1.08W (Ta) |
Package / Case | 8-TSSOP (0.173", 4.40mm Width) |
Package | Tape & Reel (TR) |
Product Attribute | Attribute Value |
---|---|
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Gate Charge (Qg) (Max) @ Vgs | 70 nC @ 5 V |
FET Type | P-Channel |
FET Feature | - |
Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
Drain to Source Voltage (Vdss) | 20 V |
Current - Continuous Drain (Id) @ 25°C | 6.2A (Ta) |
Base Product Number | SI6473 |
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