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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Arrays > SI5511DC-T1-GE3
Vishay Siliconix

SI5511DC-T1-GE3

Manufacturer Part Number SI5511DC-T1-GE3
Manufacturer Vishay Siliconix
Detailed Description MOSFET N/P-CH 30V 4A 1206-8
Package 1206-8 ChipFET™
In Stock 5542 pcs
Data sheet Material ComplianceSI5511DC
Reference Price (In US Dollars)
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Specifications

Product Attribute Attribute Value
Vgs(th) (Max) @ Id 2V @ 250µA
Technology MOSFET (Metal Oxide)
Supplier Device Package 1206-8 ChipFET™
Series TrenchFET®
Rds On (Max) @ Id, Vgs 55mOhm @ 4.8A, 4.5V
Power - Max 3.1W, 2.6W
Package / Case 8-SMD, Flat Lead
Package Tape & Reel (TR)
Operating Temperature -55°C ~ 150°C (TJ)
Product Attribute Attribute Value
Mounting Type Surface Mount
Input Capacitance (Ciss) (Max) @ Vds 435pF @ 15V
Gate Charge (Qg) (Max) @ Vgs 7.1nC @ 5V
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 4A, 3.6A
Configuration N and P-Channel
Base Product Number SI5511

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SI5511DC-T1-GE3 Datasheet PDF

Data sheet