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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > SI5499DC-T1-GE3
Vishay Siliconix

SI5499DC-T1-GE3

Manufacturer Part Number SI5499DC-T1-GE3
Manufacturer Vishay Siliconix
Detailed Description MOSFET P-CH 8V 6A 1206-8 CHIPFET
Package 1206-8 ChipFET™
In Stock 4618 pcs
Data sheet Material Compliance
Reference Price (In US Dollars)
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Specifications

Product Attribute Attribute Value
Vgs(th) (Max) @ Id 800mV @ 250µA
Vgs (Max) ±5V
Technology MOSFET (Metal Oxide)
Supplier Device Package 1206-8 ChipFET™
Series TrenchFET®
Rds On (Max) @ Id, Vgs 36mOhm @ 5.1A, 4.5V
Power Dissipation (Max) 2.5W (Ta), 6.2W (Tc)
Package / Case 8-SMD, Flat Lead
Package Tape & Reel (TR)
Operating Temperature -55°C ~ 150°C (TJ)
Product Attribute Attribute Value
Mounting Type Surface Mount
Input Capacitance (Ciss) (Max) @ Vds 1290 pF @ 4 V
Gate Charge (Qg) (Max) @ Vgs 35 nC @ 8 V
FET Type P-Channel
FET Feature -
Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V
Drain to Source Voltage (Vdss) 8 V
Current - Continuous Drain (Id) @ 25°C 6A (Tc)
Base Product Number SI5499

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SI5499DC-T1-GE3 Datasheet PDF

Data sheet