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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > SI4866BDY-T1-GE3
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SI4866BDY-T1-GE3

Manufacturer Part Number SI4866BDY-T1-GE3
Manufacturer Vishay Siliconix
Detailed Description MOSFET N-CH 12V 21.5A 8SO
Package 8-SOIC
In Stock 5681 pcs
Data sheet Mult Mosfet EOL 30/Aug/2018SI4866BDY
Reference Price (In US Dollars)
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Specifications

Product Attribute Attribute Value
Vgs(th) (Max) @ Id 1V @ 250µA
Vgs (Max) ±8V
Technology MOSFET (Metal Oxide)
Supplier Device Package 8-SOIC
Series TrenchFET®
Rds On (Max) @ Id, Vgs 5.3mOhm @ 12A, 4.5V
Power Dissipation (Max) 2.5W (Ta), 4.45W (Tc)
Package / Case 8-SOIC (0.154", 3.90mm Width)
Package Tape & Reel (TR)
Operating Temperature -55°C ~ 150°C (TJ)
Product Attribute Attribute Value
Mounting Type Surface Mount
Input Capacitance (Ciss) (Max) @ Vds 5020 pF @ 6 V
Gate Charge (Qg) (Max) @ Vgs 80 nC @ 4.5 V
FET Type N-Channel
FET Feature -
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Drain to Source Voltage (Vdss) 12 V
Current - Continuous Drain (Id) @ 25°C 21.5A (Tc)
Base Product Number SI4866

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SI4866BDY-T1-GE3 Datasheet PDF

Data sheet

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