SI4850BDY-T1-GE3
Manufacturer Part Number | SI4850BDY-T1-GE3 |
---|---|
Manufacturer | Vishay Siliconix |
Detailed Description | MOSFET N-CH 60V 8.4A/11.3A 8SO |
Package | 8-SO |
In Stock | 232112 pcs |
Data sheet | New Solder Plating Site 18/Apr/2023SI4850BDY |
Reference Price (In US Dollars)
1 | 10 | 100 | 500 | 1000 |
---|---|---|---|---|
$0.374 | $0.335 | $0.261 | $0.216 | $0.17 |
Delivery Time
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Specifications
Product Attribute | Attribute Value |
---|---|
Vgs(th) (Max) @ Id | 2.8V @ 250µA |
Vgs (Max) | ±20V |
Technology | MOSFET (Metal Oxide) |
Supplier Device Package | 8-SO |
Series | TrenchFET® Gen IV |
Rds On (Max) @ Id, Vgs | 19.5mOhm @ 10A, 10V |
Power Dissipation (Max) | 2.5W (Ta), 4.5W (Tc) |
Package / Case | 8-SOIC (0.154", 3.90mm Width) |
Package | Tape & Reel (TR) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Product Attribute | Attribute Value |
---|---|
Mounting Type | Surface Mount |
Input Capacitance (Ciss) (Max) @ Vds | 790 pF @ 30 V |
Gate Charge (Qg) (Max) @ Vgs | 17 nC @ 10 V |
FET Type | N-Channel |
FET Feature | - |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Drain to Source Voltage (Vdss) | 60 V |
Current - Continuous Drain (Id) @ 25°C | 8.4A (Ta), 11.3A (Tc) |
Base Product Number | SI4850 |
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