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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > SI4850BDY-T1-GE3
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SI4850BDY-T1-GE3

Manufacturer Part Number SI4850BDY-T1-GE3
Manufacturer Vishay Siliconix
Detailed Description MOSFET N-CH 60V 8.4A/11.3A 8SO
Package 8-SO
In Stock 232112 pcs
Data sheet New Solder Plating Site 18/Apr/2023SI4850BDY
Reference Price (In US Dollars)
1 10 100 500 1000
$0.374 $0.335 $0.261 $0.216 $0.17
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Specifications

Product Attribute Attribute Value
Vgs(th) (Max) @ Id 2.8V @ 250µA
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
Supplier Device Package 8-SO
Series TrenchFET® Gen IV
Rds On (Max) @ Id, Vgs 19.5mOhm @ 10A, 10V
Power Dissipation (Max) 2.5W (Ta), 4.5W (Tc)
Package / Case 8-SOIC (0.154", 3.90mm Width)
Package Tape & Reel (TR)
Operating Temperature -55°C ~ 150°C (TJ)
Product Attribute Attribute Value
Mounting Type Surface Mount
Input Capacitance (Ciss) (Max) @ Vds 790 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs 17 nC @ 10 V
FET Type N-Channel
FET Feature -
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 8.4A (Ta), 11.3A (Tc)
Base Product Number SI4850

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SI4850BDY-T1-GE3 Datasheet PDF

Data sheet