SI4153DY-T1-GE3
Manufacturer Part Number | SI4153DY-T1-GE3 |
---|---|
Manufacturer | Vishay Siliconix |
Detailed Description | P-CHANNEL 30-V (D-S) MOSFET SO-8 |
Package | 8-SOIC |
In Stock | 360746 pcs |
Data sheet | New Solder Plating Site 18/Apr/2023P-Channel 30 V (D-S) MOSFET |
Reference Price (In US Dollars)
1 | 10 | 100 | 500 | 1000 |
---|---|---|---|---|
$0.268 | $0.237 | $0.182 | $0.144 | $0.115 |
Delivery Time
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Specifications
Product Attribute | Attribute Value |
---|---|
Vgs(th) (Max) @ Id | 2.5V @ 250µA |
Vgs (Max) | ±25V |
Technology | MOSFET (Metal Oxide) |
Supplier Device Package | 8-SOIC |
Series | TrenchFET® Gen III |
Rds On (Max) @ Id, Vgs | 9.5mOhm @ 10A, 10V |
Power Dissipation (Max) | 3.1W (Ta), 5.6W (Tc) |
Package / Case | 8-SOIC (0.154", 3.90mm Width) |
Package | Tape & Reel (TR) |
Product Attribute | Attribute Value |
---|---|
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Input Capacitance (Ciss) (Max) @ Vds | 3600 pF @ 15 V |
Gate Charge (Qg) (Max) @ Vgs | 93 nC @ 10 V |
FET Type | P-Channel |
FET Feature | - |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Drain to Source Voltage (Vdss) | 30 V |
Current - Continuous Drain (Id) @ 25°C | 14.3A (Ta), 19.3A (Tc) |
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