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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > SI4151DY-T1-GE3
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SI4151DY-T1-GE3

Manufacturer Part Number SI4151DY-T1-GE3
Manufacturer Vishay Siliconix
Detailed Description P-CHANNEL 30-V (D-S) MOSFET SO-8
Package 8-SOIC
In Stock 166980 pcs
Data sheet New Solder Plating Site 18/Apr/2023Mult Dev 07/Jun/2023New solder paste 26/May/2023SI4151DY
Reference Price (In US Dollars)
1 10 100 500 1000
$0.441 $0.395 $0.308 $0.254 $0.201
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Specifications

Product Attribute Attribute Value
Vgs(th) (Max) @ Id 2.5V @ 250µA
Vgs (Max) ±25V
Technology MOSFET (Metal Oxide)
Supplier Device Package 8-SOIC
Series TrenchFET® Gen IV
Rds On (Max) @ Id, Vgs 7.5mOhm @ 10A, 10V
Power Dissipation (Max) 3.1W (Ta), 5.6W (Tc)
Package / Case 8-SOIC (0.154", 3.90mm Width)
Package Tape & Reel (TR)
Product Attribute Attribute Value
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Input Capacitance (Ciss) (Max) @ Vds 3250 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs 87 nC @ 10 V
FET Type P-Channel
FET Feature -
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 15.2A (Ta), 20.5A (Tc)

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SI4151DY-T1-GE3 Datasheet PDF

Data sheet