TW083N65C,S1F
| Manufacturer Part Number | TW083N65C,S1F |
|---|---|
| Manufacturer | Toshiba Semiconductor and Storage |
| Detailed Description | G3 650V SIC-MOSFET TO-247 83MOH |
| Package | TO-247 |
| In Stock | 13535 pcs |
| Data sheet |
Reference Price (In US Dollars)
| 1 | 10 | 100 | 500 | 1000 |
|---|---|---|---|---|
| $4.807 | $4.417 | $3.73 | $3.319 | $3.044 |
Delivery Time
Components-House.com is a Reliable Stocking Distributor of Electronic Parts. We specialize in all Toshiba Semiconductor and Storage series electronic components. We have 13535 pieces of Toshiba Semiconductor and Storage TW083N65C,S1F in stock available now. Request a quote from electronics components distributor at Components-House.com, our sales team will contact you within 24 hours.
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RFQ Email: info@Components-House.net
Specifications
| Product Attribute | Attribute Value |
|---|---|
| Vgs(th) (Max) @ Id | 5V @ 600µA |
| Vgs (Max) | +25V, -10V |
| Technology | SiCFET (Silicon Carbide) |
| Supplier Device Package | TO-247 |
| Series | - |
| Rds On (Max) @ Id, Vgs | 113mOhm @ 15A, 18V |
| Power Dissipation (Max) | 111W (Tc) |
| Package / Case | TO-247-3 |
| Package | Tube |
| Product Attribute | Attribute Value |
|---|---|
| Operating Temperature | 175°C |
| Mounting Type | Through Hole |
| Input Capacitance (Ciss) (Max) @ Vds | 873 pF @ 400 V |
| Gate Charge (Qg) (Max) @ Vgs | 28 nC @ 18 V |
| FET Type | N-Channel |
| FET Feature | - |
| Drive Voltage (Max Rds On, Min Rds On) | 18V |
| Drain to Source Voltage (Vdss) | 650 V |
| Current - Continuous Drain (Id) @ 25°C | 30A (Tc) |
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