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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > TW070J120B,S1Q
Toshiba Semiconductor and Storage

TW070J120B,S1Q

Manufacturer Part Number TW070J120B,S1Q
Manufacturer Toshiba Semiconductor and Storage
Detailed Description SICFET N-CH 1200V 36A TO3P
Package TO-3P(N)
In Stock 4298 pcs
Data sheet
Reference Price (In US Dollars)
1 10 100
$12.016 $11.083 $9.465
Delivery Time Components-House.com is a Reliable Stocking Distributor of Electronic Parts. We specialize in all Toshiba Semiconductor and Storage series electronic components. We have 4298 pieces of Toshiba Semiconductor and Storage TW070J120B,S1Q in stock available now. Request a quote from electronics components distributor at Components-House.com, our sales team will contact you within 24 hours.
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Specifications

Product Attribute Attribute Value
Vgs(th) (Max) @ Id 5.8V @ 20mA
Vgs (Max) ±25V, -10V
Technology SiCFET (Silicon Carbide)
Supplier Device Package TO-3P(N)
Series -
Rds On (Max) @ Id, Vgs 90mOhm @ 18A, 20V
Power Dissipation (Max) 272W (Tc)
Package / Case TO-3P-3, SC-65-3
Package Tube
Operating Temperature -55°C ~ 175°C
Product Attribute Attribute Value
Mounting Type Through Hole
Input Capacitance (Ciss) (Max) @ Vds 1680 pF @ 800 V
Gate Charge (Qg) (Max) @ Vgs 67 nC @ 20 V
FET Type N-Channel
FET Feature Standard
Drive Voltage (Max Rds On, Min Rds On) 20V
Drain to Source Voltage (Vdss) 1200 V
Current - Continuous Drain (Id) @ 25°C 36A (Tc)
Base Product Number TW070J120

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TW070J120B,S1Q Datasheet PDF