TRS4A65F,S1Q
| Manufacturer Part Number | TRS4A65F,S1Q |
|---|---|
| Manufacturer | Toshiba Semiconductor and Storage |
| Detailed Description | DIODE SIL CARBIDE 650V 4A TO220F |
| Package | TO-220F-2L |
| In Stock | 95731 pcs |
| Data sheet |
Reference Price (In US Dollars)
| 1 | 10 | 100 | 500 | 1000 |
|---|---|---|---|---|
| $0.826 | $0.742 | $0.597 | $0.49 | $0.408 |
Delivery Time
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RFQ Email: info@Components-House.net
Specifications
| Product Attribute | Attribute Value |
|---|---|
| Voltage - Forward (Vf) (Max) @ If | 1.6 V @ 4 A |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Technology | SiC (Silicon Carbide) Schottky |
| Supplier Device Package | TO-220F-2L |
| Speed | No Recovery Time > 500mA (Io) |
| Series | - |
| Reverse Recovery Time (trr) | 0 ns |
| Package / Case | TO-220-2 Full Pack |
| Product Attribute | Attribute Value |
|---|---|
| Package | Tube |
| Operating Temperature - Junction | 175°C (Max) |
| Mounting Type | Through Hole |
| Current - Reverse Leakage @ Vr | 20 µA @ 650 V |
| Current - Average Rectified (Io) | 4A |
| Capacitance @ Vr, F | 16pF @ 650V, 1MHz |
| Base Product Number | TRS4A65 |
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