TRS3E65F,S1Q
Manufacturer Part Number | TRS3E65F,S1Q |
---|---|
Manufacturer | Toshiba Semiconductor and Storage |
Detailed Description | DIODE SIL CARB 650V 3A TO220-2L |
Package | TO-220-2L |
In Stock | 122042 pcs |
Data sheet |
Reference Price (In US Dollars)
1 | 10 | 100 | 500 | 1000 |
---|---|---|---|---|
$0.775 | $0.698 | $0.561 | $0.461 | $0.384 |
Delivery Time
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Specifications
Product Attribute | Attribute Value |
---|---|
Voltage - Forward (Vf) (Max) @ If | 1.6 V @ 3 A |
Voltage - DC Reverse (Vr) (Max) | 650 V |
Technology | SiC (Silicon Carbide) Schottky |
Supplier Device Package | TO-220-2L |
Speed | No Recovery Time > 500mA (Io) |
Series | - |
Reverse Recovery Time (trr) | 0 ns |
Package / Case | TO-220-2 |
Product Attribute | Attribute Value |
---|---|
Package | Tube |
Operating Temperature - Junction | 175°C (Max) |
Mounting Type | Through Hole |
Current - Reverse Leakage @ Vr | 20 µA @ 650 V |
Current - Average Rectified (Io) | 3A |
Capacitance @ Vr, F | 12pF @ 650V, 1MHz |
Base Product Number | TRS3E65 |
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