Delivery Time
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Specifications
Product Attribute
Attribute Value
Vgs(th) (Max) @ Id
4.4V @ 1mA
Vgs (Max)
±30V
Technology
MOSFET (Metal Oxide)
Supplier Device Package
TO-220SIS
Series
π-MOSVII
Rds On (Max) @ Id, Vgs
2.51Ohm @ 1.3A, 10V
Power Dissipation (Max)
35W (Tc)
Package / Case
TO-220-3 Full Pack
Package
Tube
Operating Temperature
150°C (TJ)
Product Attribute
Attribute Value
Mounting Type
Through Hole
Input Capacitance (Ciss) (Max) @ Vds
490 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs
11 nC @ 10 V
FET Type
N-Channel
FET Feature
-
Drive Voltage (Max Rds On, Min Rds On)
10V
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
2.5A (Ta)
Base Product Number
TK3A65
Recommended Products
TK3A60DA(STA4,Q,M)MOSFET N-CH 600V 2.5A TO220SISToshiba Semiconductor and Storage