TK32E12N1,S1X
| Manufacturer Part Number | TK32E12N1,S1X |
|---|---|
| Manufacturer | Toshiba Semiconductor and Storage |
| Detailed Description | MOSFET N CH 120V 60A TO-220 |
| Package | TO-220 |
| In Stock | 190566 pcs |
| Data sheet |
Reference Price (In US Dollars)
| 1 | 10 | 100 | 500 | 1000 | 2000 | 5000 | 10000 |
|---|---|---|---|---|---|---|---|
| $0.617 | $0.553 | $0.431 | $0.356 | $0.281 | $0.263 | $0.249 | $0.24 |
Delivery Time
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RFQ Email: info@Components-House.net
Specifications
| Product Attribute | Attribute Value |
|---|---|
| Vgs(th) (Max) @ Id | 4V @ 500µA |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Supplier Device Package | TO-220 |
| Series | U-MOSVIII-H |
| Rds On (Max) @ Id, Vgs | 13.8mOhm @ 16A, 10V |
| Power Dissipation (Max) | 98W (Tc) |
| Package / Case | TO-220-3 |
| Package | Tube |
| Operating Temperature | 150°C (TJ) |
| Product Attribute | Attribute Value |
|---|---|
| Mounting Type | Through Hole |
| Input Capacitance (Ciss) (Max) @ Vds | 2000 pF @ 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 34 nC @ 10 V |
| FET Type | N-Channel |
| FET Feature | - |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Drain to Source Voltage (Vdss) | 120 V |
| Current - Continuous Drain (Id) @ 25°C | 60A (Tc) |
| Base Product Number | TK32E12 |
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