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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > TK31J60W,S1VQ
Toshiba Semiconductor and Storage

TK31J60W,S1VQ

Manufacturer Part Number TK31J60W,S1VQ
Manufacturer Toshiba Semiconductor and Storage
Detailed Description MOSFET N-CH 600V 30.8A TO3P
Package TO-3P(N)
In Stock 19573 pcs
Data sheet
Reference Price (In US Dollars)
1 10 100 500 1000
$3.797 $3.429 $2.839 $2.472 $2.153
Delivery Time Components-House.com is a Reliable Stocking Distributor of Electronic Parts. We specialize in all Toshiba Semiconductor and Storage series electronic components. We have 19573 pieces of Toshiba Semiconductor and Storage TK31J60W,S1VQ in stock available now. Request a quote from electronics components distributor at Components-House.com, our sales team will contact you within 24 hours.
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Specifications

Product Attribute Attribute Value
Vgs(th) (Max) @ Id 3.7V @ 1.5mA
Vgs (Max) ±30V
Technology MOSFET (Metal Oxide)
Supplier Device Package TO-3P(N)
Series DTMOSIV
Rds On (Max) @ Id, Vgs 88mOhm @ 15.4A, 10V
Power Dissipation (Max) 230W (Tc)
Package / Case TO-3P-3, SC-65-3
Package Tube
Operating Temperature 150°C (TJ)
Product Attribute Attribute Value
Mounting Type Through Hole
Input Capacitance (Ciss) (Max) @ Vds 3000 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs 86 nC @ 10 V
FET Type N-Channel
FET Feature -
Drive Voltage (Max Rds On, Min Rds On) 10V
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 30.8A (Ta)
Base Product Number TK31J60

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TK31J60W,S1VQ Datasheet PDF