TJ90S04M3L,LQ
Manufacturer Part Number | TJ90S04M3L,LQ |
---|---|
Manufacturer | Toshiba Semiconductor and Storage |
Detailed Description | PB-F POWER MOSFET TRANSISTOR DPA |
Package | DPAK+ |
In Stock | 98918 pcs |
Data sheet |
Reference Price (In US Dollars)
1 | 10 | 100 | 500 | 1000 |
---|---|---|---|---|
$0.843 | $0.755 | $0.607 | $0.499 | $0.413 |
Delivery Time
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Specifications
Product Attribute | Attribute Value |
---|---|
Vgs(th) (Max) @ Id | 2V @ 1mA |
Vgs (Max) | +10V, -20V |
Technology | MOSFET (Metal Oxide) |
Supplier Device Package | DPAK+ |
Series | U-MOSVI |
Rds On (Max) @ Id, Vgs | 4.3mOhm @ 45A, 10V |
Power Dissipation (Max) | 180W (Tc) |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Package | Tape & Reel (TR) |
Product Attribute | Attribute Value |
---|---|
Operating Temperature | 175°C |
Mounting Type | Surface Mount |
Input Capacitance (Ciss) (Max) @ Vds | 7700 pF @ 10 V |
Gate Charge (Qg) (Max) @ Vgs | 172 nC @ 10 V |
FET Type | P-Channel |
FET Feature | - |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Drain to Source Voltage (Vdss) | 40 V |
Current - Continuous Drain (Id) @ 25°C | 90A (Ta) |
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