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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Arrays, Pre-Biased > RN49A1FE(TE85L,F)
Toshiba Semiconductor and Storage

RN49A1FE(TE85L,F)

Manufacturer Part Number RN49A1FE(TE85L,F)
Manufacturer Toshiba Semiconductor and Storage
Detailed Description PNP + NPN BRT Q1BSR=2.2KOHM Q1BE
Package ES6
In Stock 4374 pcs
Data sheet Mult Dev EOL Apr/2021Mult Dev EOL Rev Apr/2021
Reference Price (In US Dollars)
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Specifications

Product Attribute Attribute Value
Voltage - Collector Emitter Breakdown (Max) 50V
Vce Saturation (Max) @ Ib, Ic 300mV @ 250µA, 5mA
Transistor Type 1 NPN, 1 PNP - Pre-Biased (Dual)
Supplier Device Package ES6
Series -
Resistor - Emitter Base (R2) 47kOhms
Resistor - Base (R1) 2.2kOhms, 22kOhms
Power - Max 100mW
Product Attribute Attribute Value
Package / Case SOT-563, SOT-666
Package Tape & Reel (TR)
Mounting Type Surface Mount
Frequency - Transition 200MHz, 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 10mA, 5V
Current - Collector Cutoff (Max) 500nA
Current - Collector (Ic) (Max) 100mA
Base Product Number RN49A1

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RN49A1FE(TE85L,F) Datasheet PDF

Data sheet