RN4987FE,LF(CB
Manufacturer Part Number | RN4987FE,LF(CB |
---|---|
Manufacturer | Toshiba Semiconductor and Storage |
Detailed Description | TRANS NPN/PNP PREBIAS 0.1W ES6 |
Package | ES6 |
In Stock | 1597427 pcs |
Data sheet | RN4987FE |
Reference Price (In US Dollars)
1 | 10 | 25 | 100 | 250 | 500 | 1000 |
---|---|---|---|---|---|---|
$0.121 | $0.109 | $0.078 | $0.061 | $0.038 | $0.033 | $0.022 |
Delivery Time
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Specifications
Product Attribute | Attribute Value |
---|---|
Voltage - Collector Emitter Breakdown (Max) | 50V |
Vce Saturation (Max) @ Ib, Ic | 300mV @ 250µA, 5mA |
Transistor Type | 1 NPN, 1 PNP - Pre-Biased (Dual) |
Supplier Device Package | ES6 |
Series | - |
Resistor - Emitter Base (R2) | 47 kOhms |
Resistor - Base (R1) | 10 kOhms |
Power - Max | 100mW |
Packaging | Cut Tape (CT) |
Package / Case | SOT-563, SOT-666 |
Product Attribute | Attribute Value |
---|---|
Other Names | RN4987FE(T5LFT)CT RN4987FE(T5LFT)CT-ND RN4987FELF(CBCT RN4987FELF(CTCT RN4987FELF(CTCT-ND |
Mounting Type | Surface Mount |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Manufacturer Standard Lead Time | 16 Weeks |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Frequency - Transition | 250MHz, 200MHz |
Detailed Description | Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 250MHz, 200MHz 100mW Surface Mount ES6 |
DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 10mA, 5V |
Current - Collector Cutoff (Max) | 500nA |
Current - Collector (Ic) (Max) | 100mA |
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